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Sputtering/ion milling system
- Fully computer-controlled programmable deposition
- Load-lock for fast sample turnaround
- 4E-9 Torr base pressure
- Six 2" sputtering targets and two 1.3" targets
- In situ Ar ion milling
- Cosputtering for alloy and compound deposition
- Reactive sputtering in nitrogen/oxigen plasma
- Rf and dc sputtering
- Sample heating to 650 C and cooling to 100K
- Four masks for in-situ patterning with resolution of 50 micrometers